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| BCX51 transistor (pnp) features power dissipation p cm: 0.5 w (tamb=25 ) collector current i cm: -1 a collector-base voltage v (br)cbo : -45 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=-100a, i e =0 -45 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -45 v emitter-base breakdown voltage v (br)ebo i e =-10a, i c =0 -5 v collector cut-off current i cbo v cb =-30v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a h fe(1) v ce =-2v, i c =-150ma 63 63 100 250 160 250 h fe(2) v ce =-2v, i c =- 5ma 63 dc current gain BCX51 BCX51-10 BCX51-16 h fe(3) v ce =-2v, i c =- 500ma 40 collector-emitter saturation voltage v ce(sat) i c =-500 ma, i b = -50ma -0.5 v base-emitter voltage v be(on) i c = -500 ma, v ce =-2v -1 v transition frequency f t v ce = -5v, i c =-10ma f = 100mhz 50 mhz device marking BCX51=aa BCX51-10=ac BCX51-16=ad sot-89 1. base 2. collector 3. emitter 1 2 3 b cx51 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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